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| LITE-ON SEMICONDUCTOR MBR1670CT thru 16100CT REVERSE VOLTAGE - 70 to 100 Volts FORWARD CURRENT - 16 Amperes SCHOTTKY BARRIER RECTIFIERS FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency High current capability, low VF High surge capacity Plastic package has UL flammability classification 94V-0 For use in low voltage,high frequency inverters,free whelling,and polarity protection applications B C K PIN 1 2 3 TO-220AB L M D A E DIM. A B C D E F G I J F G H I J K TO-220AB MAX. MIN. 14.22 15.88 9.65 10.67 2.54 3.43 5.84 6.86 9.28 8.26 12.70 6.35 14.73 MECHANICAL DATA Case : TO-220AB molded plastic Polarity : As marked on the body Weight : 0.08 ounces, 2.24 grams Mounting position : Any HH PIN 1 PIN 3 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward RectifiedCurrent at TC=100 C (See Fig.1) SYMBOL E P Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC METHOD) Voltage Rate of Change (Rated VR) Maximum Forward Voltage, (Note 1) R VRRM VRMS VDC I(AV) IFSM dv/dt VF IM L MBR1670CT 70 49 70 IR N 80 56 80 A PIN 2 CASE N R 2.29 2.79 1.14 0.51 0.30 0.64 3.53 4.09 3.56 4.83 L M 1.14 1.40 2.92 2.03 N All Dimensions in millimeter Y I MBR1680CT MBR1690CT 90 63 90 16 125 MBR16100CT 100 70 100 UNIT V V V A A V/us 10000 0.85 0.75 0.95 0.85 0.1 100 275 2.0 -55 to +150 -55 to +175 @IF=8A @IF=8A @IF=16A @IF=16A TJ =25 C TJ =125 C TJ =25 C TJ =125 C V Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance, per element (Note 2) @TJ =25 C @TJ =125 C mA pF C/W C C CJ R0JC TJ TSTG Typical Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range NOTES : 1. 300us Pulse Width, 2% Duty Cycle. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. Thermal Resistance Junction to Case. REV. 2-PRE, 13-Sep-2001, KTHC14 RATING AND CHARACTERISTIC CURVES MBR1670CT thru MBR16100CT AVERAGE FORWARD CURRENT AMPERES 20 PEAK FORWARD SURGE CURRENT, AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT 150 125 100 75 50 25 0 1 2 5 10 20 50 100 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 16 12 8 4 RESISTIVE OR INDUCTIVE LOAD 0 20 40 60 80 100 120 140 160 CASE TEMPERATURE , C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL REVERSE CHARACTERISTICS 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT ,(A) INSTANTANEOUS REVERSE CURRENT ,(mA) 10 10 1.0 TJ = 125 C 0.1 TJ = 75 C 0.01 TJ = 25 C 0.001 0 20 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) CAPACITANCE , (pF) N I M I L E R P 1.0 0.1 40 60 80 100 120 140 A 0.4 R 0.6 Y 0.7 TJ = 25 C PULSE WIDTH 300us 2% Duty cycle 0.1 0.2 0.3 0.5 0.8 0.9 1.0 INSTANTANEOUS FORWARD VOLTAGE , VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 100 TJ = 25 C, f= 1MHz 10 0.1 1 4 10 100 REVERSE VOLTAGE , VOLTS REV. 2-PRE, 13-Sep-2001, KTHC14 |
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